vishay sfh636 document number 83681 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179064 v cc c e a c nc 1 2 3 6 5 4 pb p b -free e3 optocoupler, phototransistor output, 1 mbd, 10 kv/ms cmr, split collectortransistor output features ? high speed optocoupler without base connection isolation test voltage: 5300 v rms gaalas emitter integrated detector with photo diode and transistor high data transmission rate: 1.0 mbit/s ttl compatible open collector output ctr at i f = 16 ma, v o = 0.4 v, v cc = 4.5 v, t amb = 25 c: 19 % good ctr linearity rela tive to forward current low coupling capacitance dv/dt: typ. 10 kv/ s lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications igbt drivers data communications programmable controllers description the sfh636 is an optocoupler with a gaalas infrared emitting diode, optically coupled to an integrated photo detector consisting of a photo diode and a high speed transistor in a dip-6 plastic package. the device is functionally similar to 6n136 except there is no base connection, and the electrical foot print is dif- ferent. noise and dv/dt performance is enhanced by not bringing out the base connection. signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 mhz. the potential difference between the circuits to be coupled should not exceed the maximum permissible refer- ence order information for additional information on t he available options refer to option information. part remarks sfh636 ctr 19 %, dip-6 sfh636-x006 ctr 19 %, dip-6 400 mil (option 6) sfh636-x007 ctr 19 %, smd-6 (option 7) SFH636-X009 ctr 19 %, smd-6 (option9)
www.vishay.com 2 document number 83681 rev. 1.5, 26-oct-04 vishay sfh636 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 3.0 v dc forward current i f 25 ma surge forward current t p 1.0 s, 300 pulses/s i fsm 1.0 a power dissipation p diss 45 mw parameter test condition symbol value unit supply voltage v s - 0.5 to 30 v output voltage v o - 0.5 to 20 v output current i o 8.0 ma power dissipation p diss 100 mw parameter test condition symbol value unit isolation test voltage (between emitter and detector refer to climate din 40046, part 2, nov. 74) v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature dip soldering: distance to seating plane 1.5 mm t = 10 s max. dip soldering: distance to seating plane 1.5 mm t sld 260 c
vishay sfh636 document number 83681 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol min ty p. max unit forward voltage i f = 16 ma v f 1.5 1.8 v reverse current v r = 3.0 v i r 0.5 10 a capacitance v r = 0 v, f = 1.0 mhz c o 125 pf thermal resistance r thja 700 k/w parameter test condition symbol min ty p. max unit logic high supply current i f = 0 v, v o (open), v cc =15 v i cch 0.01 1.0 a i f = 0 v, v o (open), v cc = 15 v i cch 0.01 2.0 a output current, output high i f = 0 v, v o (open), v cc = 5.5 v i oh .003 0.5 a i f = 0 v, v o (open), v cc = 15 v i oh .01 1.0 a i oh 50 a collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 3.0 pf thermal resistance r thja 300 k/w parameter test condition symbol min ty p. max unit coupling capacitance c c 0.6 pf collector emitter saturation voltage i f = 16 ma, i o = 2.4 ma, v cc = 4.5 v v ol 0.1 0.4 v supply current, logic low i f = 16 ma, v o open, v cc = 15 v i dd 80 figure 1. test set-up v cc 1 2 3 4 5 6 r l v o 100 ? c l = 15pf c = 100 nf i f pulse generator zo=50 ? t r ,t f =5ns duty cycle = 10% period = 100 s isfh636_01 figure 2.sitchingtimemeasurement isfh636_02 5v 0 0 t t t phl t plh v out i f 1.5v 16 ma
www.vishay.com 4 document number 83681 rev. 1.5, 26-oct-04 vishay sfh636 vishay semiconductors current transfer ratio switching characteristics switching time measurement common mode transient immunity parameter test condition symbol min ty p. max unit current transfer ratio i f = 16 ma, v o = 0.4 v, v cc = 4.5 v i c /i f 19 30 % i f = 16 ma, v o = 0.5 v, v cc = 4.5 v i c /i f 15 % parameter test condition symbol min ty p. max unit propagation delay time (high-low) i f = 16 ma, v cc = 5.0 v, r l = 1.9 k ? t phl 0.3 0.8 s propagation delay time (low-low) i f = 16 ma, v cc = 5.0 v, r l = 1.9 k ? t plh 0.3 0.8 s figure 3. common mode transient test isfh636_03 v cc 1 2 3 4 5 6 r l v o i f pulse generator common mode v cc a b c = 100 nf figure 4.measurementaeformofcmr isfh636_04 5v 0 0 t t v cm v o 0 v o t 10% 90% 90% 10% v ol t f t r a: i f =0ma a: i f =16ma parameter testcondition symol min ty p. max nit commonmodetransient immunity(high) i o =0,v cm =1500v p-p , r l =1.9k ? , v cc = 5.0 v cm h 10 kv/ s common mode transient immunity (low) i o = 16 ma, v cm = 1500 v p-p , r l = 1.9 k ? , v cc = 5.0 v cm l 10 kv/ s
vishay sfh636 document number 83681 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) figure 5. output characteristics-output current vs. output voltage figure 6. permissible forward current of emitting diode vs. ambient temperature figure 7. permissible total po wer dissipation vs. ambient temperature isfh636_05 v cc = 5.0 v isfh636_06 isfh636_07 figure 8.forardcurrentofemittingdiodes.forardvoltage figure 9.smallsignaltransfe rratios.forardcurrent figure 10.currenttransferratio(normalied)s.amient temperature isfh636_08 1.1 1.2 1.3 1.4 1.5 1.6 10 2 10 1 10 0 10 -1 10 -2 10 -3 vf/v i f /ma isfh636_09 v cc = 5.0 v isfh636_10 i f =16ma, v o = 0.4 v, v cc = 5.0 v,
www.vishay.com 6 document number 83681 rev. 1.5, 26-oct-04 vishay sfh636 vishay semiconductors figure 11. output current (high) vs. ambient temperature figure 12. delay times vs. ambient temperature figure 13. current transfer rati o (normalized) vs. forward current isfh636_11 v o =v cc = 5.0 v, i f =0 isfh636_12 CC CC 6n 135 CCCCC 6n 136 if=16 ma, v cc = 5.0 v, r l =4.1 k ? , sfh636: rl=1.9 k ? isfh636_13 CC CC 6n 135 CCCCC 6n 136 i f =16 ma, v o =0.4 v, v cc =5.0 v
vishay sfh636 document number 83681 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
www.vishay.com 8 document number 83681 rev. 1.5, 26-oct-04 vishay sfh636 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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